A new technical paper titled “Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement ...
The fabrication of nanoscale devices increasingly relies on techniques that offer atomic‐scale precision, with Atomic Layer Deposition (ALD) and Area-Selective Deposition (ASD) at the forefront. ALD ...
To fully unlock the potential of the upcoming era of Atomic Layer Deposition (ALD) research, it is crucial to incorporate the viewpoints of academia, industry, and governmental organisations, and ...
A research team has made a significant breakthrough in thin film deposition technology. A research team, led by Professor Joonki Suh in the Department of Materials Science and Engineering and the ...
Atomic layer deposition (ALD) originated from atomic layer epitaxy, which was introduced in 1970 and initially used in electroluminescent displays. It rapidly revolutionized semiconducting ...
Atomic layer deposition (ALD) used to be considered too slow to be of practical use in semiconductor manufacturing, but it has emerged as a critical tool for both transistor and interconnect ...
SkyWater Technology announced on September 7 that it will offer customers a new semiconductor processing tool for atomic layer deposition (ALD), the Applied Picosun MorpherTM. Many devices, such as ...
A team of international researchers has simplified the deposition of thin film layers in the commercial production of TOPCon solar cells. Via a tube-type industrial plasma-assisted atomic layer ...
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Researchers unveil innovative deposition technology for uniform metal alloys at the atomic scale
A research team at UNIST has developed a new deposition technology that enables the uniform mixing of different metals within a single atomic layer. This advancement holds significant promise for ...
insights from industryDr. Paul Poodt & Alexander BoumanCTO/Founder & Commercial DirectorSparkNano In this interview, AZoMaterials speaks with Dr. Paul Poodt, CTO, and Alexander Bouman, Business ...
ALD is based on the sequential use of a gas phase chemical process. The ALD cycle consists of four main steps: (1) pulsing of a precursor A, (2) purging of the reactor to remove excess precursor and ...
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