Semiconductor Engineering

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
NextBigFuture

Major breakthrough in transistor size by creating gate only 1 nanometer long

For more than a decade, engineers have been eyeing the finish line in the race to shrink the size of components in integrated circuits. They knew that the laws of physics had set a 5-nanometer ...
Semiconductor Engineering

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
ZDNet

Open-and-shut case for new transistor gates?

Motorola has put two transistors in one. Researchers at the company's Austin, Texas, laboratory said Monday that they have developed a dual-gate transistor in which the two gates can act independently ...
EDN

Insulated Gate Bipolar Transistor Basics

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...
EDN

Intel crafts transistor with 20-nm gate length

KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...