San Francisco, CA. Qorvo at IMS 2016 highlighted several new products and features. The company debuted six new 50-V GaN transistors and said that its QPD1000 15-W GaN on SiC wideband input-matched ...

BOSTON--(BUSINESS WIRE)--The recently released Strategy Analytics GaAs and Compound Semiconductor Technologies Service (GaAs) Data Model, “Cellular Infrastructure Component Demand,” forecasts that ...

The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

Ampleon has released the BLP05H9S500P LDMOS-based power amplifier transistor designed for use in industrial heating, defrosting, plasma lighting and medical applications. Operating at a frequency ...

A new generation of high-voltage gallium arsenide power amplifier transistors is designed to substantially boost the efficiency of 3G cellular base stations, reducing energy costs while allowing ...

Freescale Semiconductor today introduced two LDMOS RF power transistors that allow wireless base station amplifiers to cover all channels in an entire allocated frequency band. The high-efficiency ...

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...

Cree introduces Gallium Nitride power transistors in low cost plastic packaging for wireless infrastructure, including macro basestations and remote radio heads (RRH). The low-cost plastic-packaged ...

Here, a power amplifier circuit has been designed using MOSFET to produce 100 W output to drive a load of about 8 Ω. Here, a power amplifier circuit has been designed using MOSFET to produce 100 W ...

RF power amplifiers are going wide and high to meet wider frequency ranges and the need for more bandwidth. Many wireless electronic systems operate over wide frequency ranges and the need for more ...