Power devices continue to evolve rapidly as SiC and GaN technologies become more highly integrated, easy to use, and cost-effective. Meanwhile, steady improvements in MOSFET structures and processes ...
The National Academy of Inventors have accepted 23 fellows from Ohio State since 2013 and Anant Agarwal is one of three in the most recent cohort. Agarwal, a professor in electrical and computer ...
Power devices continue to evolve rapidly as SiC and GaN technologies become more efficient, integrated, and cost-effective. Meanwhile, steady improvements in MOSFET structures and processes enable ...
High voltage silicon carbide (SiC) power devices represent a transformative advance in power electronics, offering superior voltage handling capability, high temperature performance and enhanced ...
Enables automotive OEMs and power converter designers to accelerate the time to market for discrete devices and power modules Keysight’s PD1550A Advanced Dynamic Power Device Analyzer tests ...
High-voltage power devices and transistors form the backbone of modern energy conversion systems, serving critical roles in renewable energy, automotive powertrains and industrial drives. These ...
Santa Clara, CA and Kyoto, Japan, Feb. 26, 2026 (GLOBE NEWSWIRE) -- ROHM Co., Ltd. (hereinafter “ROHM”) today announced it has decided to integrate its own development and manufacturing technologies ...
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