The 300mm silicon carbide wafer targets higher production capacity for power electronics and advanced system integration.
Program aims to provide technology and products to improve the performance and availability of silicon carbide to address surging demand from electric vehicles, telecommunication and industrial ...
SAN LUIS OBISPO, Calif., July 6, 2023 /PRNewswire/ -- Revasum today announced the availability of 200mm SiC wafer polishing capability on their 6EZ chemical mechanical polishing platform. The 6EZ has ...
PITTSBURGH, March 07, 2022 (GLOBE NEWSWIRE) -- II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap semiconductors, today announced that it is accelerating its investment in 150 mm and 200 mm ...
Researchers claims to have developed a method for producing a layer of graphene on a silicon carbide (SiC) wafer to form a semiconductor with a band gap of 0.6 eV and with room temperature electron ...
SiC filter substrate Cordierite filter substrate Silicon carbide (SiC) in “spent” emission control catalysts recycle streams requires more time and energy to process in electric arc furnace (EAFs) ...
First-of-a-kind SiC epitaxial substrate manufacturing facility in Europe Full vertical integration to reinforce substrate supply for SiC devices and solutions enabling automotive and industrial ...
There are many other 2D materials than graphene that exhibit a hexagonal array and are uni-atomic. A team of researchers from Brazil and Germany have used theoretical ab-initio methods to investigate ...
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