At a memory conference this week, semiconductor giant Samsung updated its roadmap with several ambitious technologies. Those include 3D DRAM and stacked DRAM, which it says could arrive this decade.

Samsung has just unveiled its next-generation 3D DRAM technology for next-generation memory solutions, with a single-chip capacity of over 100GB, a massive leap over current limitations in DRAM ...

Samsung Electronics has successfully stacked the next-gen 3D DRAM to 16 layers, twice as many as its competitor Micron. According to reports from TheElec and ZDNet Korea, citing industry sources, ...

Samsung Electronics has set its sights on becoming the frontrunner in the emerging field of 3D DRAM memory, according to a report from Semiconductor Engineering. This announcement, made at the Memcon ...

Micron Technology has not just filled in a capacity shortfall for more high bandwidth stacked DRAM to feed GPU and XPU accelerators for AI and HPC. It has created DRAM that stacks higher and runs ...

D-Matrix shifts focus from AI training to inference hardware innovation The Corsair uses LPDDR5 and SRAM to cut HBM reliance Pavehawk combines stacked DRAM and logic for lower latency Sandisk and SK ...

Samsung has come out of the gate strong in 2024 by announcing it's developed a 12-layer version of the most cutting-edge high-bandwidth memory (HBM) available today, HBM3e. The development will move ...

Samsung said on Tuesday that it has developed the industry's first 12-stack HBM3E DRAM, making it a high bandwidth memory with the highest capacity to date. The South Korean tech giant said the HBM3E ...

Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.

d-Matrix 3DIMC to Deliver 10x Faster Inference Than HBM4-Based Solutions; Commercial Debut Planned With d-Matrix Raptor Inference Accelerator TAIPEI, Taiwan, Nov. 17, 2025 /PRNewswire/ -- d-Matrix, ...